13001 transistor equivalent. Part #: 13001.

13001 transistor equivalent. 13001 TRANSISTOR (NPN) FEATURE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitSOT-23 VCBO 700 V Collector -Base Voltage VCEO 400 VCollector-Emitter Voltage VEBO 9 VEmitter-Base Voltage IC Collector Current -Continuous 0. pdf 13001 TRANSISTOR (NPN) FEATURE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitSOT-23 VCBO 700 V Collector -Base Voltage VCEO 400 VCollector-Emitter Voltage VEBO 9 VEmitter-Base Voltage IC Collector Current -Continuous 0. Description: NPN Silicon Epitaxial Planar Transistor. It’s commonly found in power supply circuits, motor control systems, and audio amplifiers, making it a staple component for engineers and hobbyists 13001 Datasheet. In this article, we will explore the fundamental aspects of the 13003/MJE13003 transistor, including its pinout, notable features, equivalent alternatives View results and find 13001 transistor equivalent datasheets and circuit and application notes in pdf format. Primarily utilized in high-voltage circuits, this transistor excels in switching and amplification tasks. 35 W 2. 13001-A Transistor Datasheet pdf, 13001-A Equivalent. 13001. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. Parameters and Characteristics Aug 16, 2024 · In this article, we'll delve into the 13001 transistor, exploring its pinout, circuit diagram, uses, datasheet, equivalent, and more details. 13003 Datasheet and Replacement Type Designator: 13003 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage |Vcb|: 600 V Maximum Collector-Emitter Voltage |Vce|: 400 V Maximum Emitter-Base Voltage |Veb|: 9 V Maximum Collector Current |Ic max|: 1. BJTs work by using a small current at the base to control a larger current flowing from the collector to the emitter. Manufacturer: SEMTECH ELECTRONICS LTD. Oct 24, 2023 · Description 13001 is 600V, 200mA, Silicon NPN Transistor. 2 A 1. Datasheet: 184Kb/2P. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 8 British Library Cataloguing in Publication Data Michaels, Adrian International transistor equivalents guide 1. Parameters and Characteristics May 19, 2023 · The 13003/MJE13003 transistor is a widely used power transistor whose robust design and impressive features make it a popular choice for a wide range of projects, from power amplifiers and voltage regulators to inverter and charger circuits. The gain of the KSE13001-O will be in the range from 55 to 80, for the KSE13001-R it will be in the range from 40 to 65. Aug 16, 2024 · In this article, we'll delve into the 13001 transistor, exploring its pinout, circuit diagram, uses, datasheet, equivalent, and more details. 13 KB Datasheet 13001-Elite. Applications: 1. The high breakdown voltage and current-carrying capability make it particularly suited for low-power SMPS and lamp ballasts. Operating Junction Temperature (Tj): 150 °C Transition Frequency Aug 16, 2024 · The 13001 transistor is a widely used NPN bipolar junction transistor (BJT) known for its versatility in various electronic applications. . Part #: 13001. Download. Jun 27, 2025 · The 13001 is a bipolar junction transistor (BJT), specifically an NPN-type semiconductor device. 13001 NPN Epitaxial Silicon Transistor 13001 NPN Epitaxial Silicon Transistor Features C. This transistor is designed for amplifying or switching electronic signals in various electronic circuits. File Size: 184Kbytes. Feb 24, 2019 · The MJE13001 NPN Bipolar Junction Transistor (BJT) stands out as a versatile component widely employed in various electronic applications, ranging from lamp ballasts to amplifier circuits. Oct 27, 2020 · 13007 or MJE13007 is a BJT transistor designed for high voltage and other applications. Learn about its pinout, equivalent circuits, uses, and key specifications for optimal performance. Case variants and 13001 pinout, analogs. Feb 10, 2025 · Explore the 13001 transistor, a versatile NPN BJT used in various applications. Its reliable performance and balanced features enhancing its usage in various electronic projects. Page: 2 Pages. This article explores the Mar 14, 2022 · Equivalent APT13005D, MJE13007 How To Use MJE13001 The MJE13001 is an NPN bipolar transistor featuring a high breakdown voltage of 600V between the collector and emitter and a medium emitter current of 200mA. Datasheet Details Part number 13001 Manufacturer Elite File Size 60. Ses performances fiables et ses fonctionnalités équilibrées . 25 A Max. Today we are going to discuss about transistor 13007 pinout, equivalent, features, applications and other important information about this transistor. This article provides an in-depth overview of the MJE13001, covering its pinout, specifications, applications, and equivalents. 165 Results The KSE13001 transistor can have a current gain of 40 to 80. May 16, 2023 · 13001 PDF Datasheet - 400V, 200mA, NPN Transistor, 13001 pinout, 13001 equivalent, 13001 replacement, schematic, manual, data, circuit. View results and find 13001 transistor datasheets and circuit and application notes in pdf format. Applications for 13001 transistors. May 7, 2022 · 13001S8D Datasheet - NPN Transistor - JTD Semi, 13001 datasheet, 13001S8D pdf, 13001S8D pinout, manual, 13001S8D schematic, equivalent. Nov 26, 2024 · MJE13001 Transistor: Pinout, Equivalents, and Circuit Diagram The 13001 transistor is a versatile NPN bipolar junction transistor that excels in high-voltage applications, making it a staple in devices such as power supplies, motor controls, and audio amplifiers. Find 13001-A transistor equivalent substitute The main technical characteristics of the transistor 13001. 75 W Maximum Collector-Base Voltage |Vcb|: 600 V Maximum Collector-Emitter Voltage |Vce|: 400 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 0. Bipolar Transistor Cross-Reference Search Material = Struct = Pc > W Vcb > V Vce > V Veb > V Ic > A Tj > C Ft > MHz Cc < pF Hfe > Caps = + similar ones R1 = kOhm R2 = kOhm R1/R2 = Empty or zero fields are ignored during the search! MJE13001 Datasheet and Replacement Type Designator: MJE13001 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Transistors Sep 25, 2020 · 13005 / MJE13005 Transistor Pinout, Equivalent, Features, Uses by admin · September 25, 2020 Today we are going to discuss about 13005 / MJE13005 transistor pinout, equivalent, features, uses and other information about this high voltage TO-220 Packaged BJT transistor. Power Switching 13001 Pinout Absolute Maximum Ratings 1. pdf Description NPN Epitaxial Silicon Transistor 13001-0 Transistor Datasheet pdf, 13001-0 Equivalent. BASE PC Collector Power Dissipation 0. Nov 26, 2024 · Transistor MJE13001: Pinout, équivalents et diagramme de circuit Le transistor 13001 est un transistor de jonction bipolaire NPN polyvalent qui excelle dans les applications à haute tension, ce qui en fait un aliment de base dans les appareils tels que les alimentations, les commandes moteurs et les amplificateurs audio. 2 A Max. Get 13001-A NPN transistor Datasheets, PDF, Specification, Characteristics, Material, Polarity, Power Dissipation, Package and Symbols. el8 yxna 4u3tn icf0 kr40 mpub zmh jbf myq wxg